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Thermal Equilibrium in a-Si:H N+-P-P+ and P+-N-N+ Structures

Published online by Cambridge University Press:  26 February 2011

Jin Jang ,
Young Kuen Lee ,
Yi Sang Lee ,
Jung Mok Jun  and
Choochon Lee
Jin Jang
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Young Kuen Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Yi Sang Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Jung Mok Jun
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Choochon Lee
Affiliation:
Dept. of Physics, Korea Advanced Institute of Science & Technology, P.O. Box 150 Chungyang, Seoul, Korea
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Abstract

Thermal equilibration processes in diode structures of doped hydrogenated amorphous silicon (a-Si:H) have been studied. The fast cooling from above the thermal equilibrium temperature (TE) results in an increase in dark reverse current as well as in forward current. The reverse leakage currrent and the diode quality factor increase with quenching temperature at above TE. It is concluded that the dangling bond density increases upon fast cooling from above TE, even though the amount of the increase is small compared with that for the active dopants. On the other hand, the drift mobility changes little after fast cooling. We propose a new model to explain the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 315
Copyright
Copyright © Materials Research Society 1988

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