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Submicron Roughness Determination at the Si-SiO2 Interface and Correlations to Prccessing Steps and Electronic Properties

Published online by Cambridge University Press:  22 February 2011

Peter O. Hahn ,
I. Lampert  and
A. Schnegg
Peter O. Hahn
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
I. Lampert
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
A. Schnegg
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
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Abstract

A newly developed optical surface characterization technique using the diffuse scattered light of two laser beams will be presented. The method determines root-mean-square roughness values (RMS) of surfaces down to 1 Å and corresponding correlation lengths in the submicron area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 247
Copyright
Copyright © Materials Research Society 1988

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References

/1/ Schrieffer, J.R., Phys. Rev. 97, 641 (1955)Google Scholar
/2/ Stern, F. and Howard, W.E., Phys. Rev. 163, 816 (1967)Google Scholar
/3/ Cheng, Y.C., Proceedings of the 2nd International Conference on Solid Surfaces, Kyoto, Jpn., J. Appl. Phys. Suppl. 2, 363 (1974)Google Scholar
/4/ Goodnick, S.M., Ferry, D.K., Wilmsen, C.W., Liliental, Z., Fathy, D., and Krivanek, O.L., Phys. Rev. B, 32 (12), 8171 (1985)Google Scholar
/5/ Feenstra, R.M. and Oehrlein, G.S., Appl. Phys. Lett. 47, 97 (1985)Google Scholar
/6/ Hahn, P.O. and Henzler, M., J. Appl. Phys. 52, 4122 (1981) P.O. Hahn and M. Henzler, J. Vac. Sci. Technol. A2, 574 (1983)Google Scholar
/7/ Hahn, P.O. and Henzler, M., J. Appl. Phys. 54, 6492(1983)Google Scholar
/8/ Hahn, P.O., Yokohama, S., and Henzler, M., Surf. Sci., 142, 545 (1984)CrossRefGoogle Scholar
/9/ Mattsson, L., in “Thin Film Technologies”, SPIE Proceedings, No. 652, Innsbruck (1986)Google Scholar
/10/ Hahn, P.O. in Thin Films - Interfaces and Phenomena edited by Nemanich, R.J. and Ho, P.S. (Mater. Res. Soc. Proc. 54, p. 645–650, (1986)Google Scholar
/11/ Behm, J. (private communication), University of MunichGoogle Scholar
/12/ Grundner, M. and Jacob, H., Appl. Phys. A 39, 3206 (1986)Google Scholar
/13/ Wolters, D.R. and Schoot, J.J. v. d. in Dielectric Breakdown in MOS-devices, Part I, Philips J. Research, 40, 115 (1985)Google Scholar
/14/ Carim, A.H. and Bhattacharyya, A., Appl. Phys. Lett. 46, (9), 872 (1985)Google Scholar