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The Study on Microstructure by NMR, FTIR, Raman, Conductivity and Optical Bandgap in Hydrogenated Amorphous Silicon Prepared by Novel Fabrication Methods

Published online by Cambridge University Press:  21 February 2011

K. C. Hsu ,
H. Chang ,
C. S. Hong  and
H. L. Hwang
K. C. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C.
H. Chang
Affiliation:
Department of Chemistry, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C.
C. S. Hong
Affiliation:
Center for Aviation & Space Technology, I.T.R.I., Hsin-Chu, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C.
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Abstract

It was found that hydrogen dilution in the SiH4/H2 mixture tend to show a sharp line-shape in the NMR spectra as the substrate temperature is higher than 300 °C. The hydrogen-atom-treatment method also produces the same effect at a lower substrate temperature about 250°C. The Raman scattering spectra show that the hydrogen-atom-treatment creates the microcrystalline structure at a temperature higher than 250°C while hydrogen dilution produces mixed phases containing amorphous phase and a small quantity of micro-crystalline phase. Together with the optical bandgap narrowing, the increase of the dark conductivity and the reduction of photo-to-dark conductivity ratio, these samples indicate that with more hydrogen incorporation during deposition and plasma hydrogen treatment, these films possess a much compact structure, and the degree of crystallinity of hydrogenated silicon film was found to be systematically changed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

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References

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