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Structures of Bonding Interface by Forming Hydrogen Bridges

Published online by Cambridge University Press:  15 February 2011

M. Nagakubo ,
H. Suzuki ,
T. Idogaki  and
T. Hattori
M. Nagakubo
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
H. Suzuki
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
T. Idogaki
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
T. Hattori
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
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Abstract

Direct bonding by forming interface hydrogen bridges has been investigated for both combinations of AI.Si and Al.PZT{Pb(Zr,Ti)03). Hydrogen bridges are formed between OH-groups and oxygen atoms on each bonding surface. Therefore, the surface adsorbing of OH-groups (hydrophilic treatment) is required to the pre-treatment of bonding surface. In this study, two ways of conventional hydrophilic treatment by wet-process and novel treatment by the surface bombardment of hydro-ions(H2O+, OH+, O+, and others) in vacuum (dry-process) have been examined.

Each bonding surface is contacted in the air after the hydrophilic treatment. In the case of hydrophilic treatment by wet-process, the bonding strength of Al-Si shows about 20 MPa after the heat treatment of above 350°C. As for the dry-process, both combinations of At.Si and AI.PZT are bondable, and their strength shows the similar tendency as wet-process with the time and the temperature of heat treatment. However, the bonding area increases more quickly than the ones of wet process. From the results of SIMS and cross-sectional TEM observation of AlSi bonding interface, it is suggested that these bonding are caused by the hydrogen bond formation without interfacial water molecules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 103
Copyright
Copyright © Materials Research Society 1995

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References

1. Spierings, G.A.C.M. and Haisma, J., Proc. of the First Int. Symp. on Semiconductor Wafer Bonding: Sci., Tech., and Applications, pp. 18–32(1992).Google Scholar
2. Stengle, R., Tan, T., and Gosele, U., J. J. Appl. Phys., Vol.28, No.10, pp1735–1741(1989).Google Scholar
3. Fujino, S., Matsui, M., Himi, H. and Hattori, T., IEICE Technical Reports, SDM91-196, pp21 1992.Google Scholar
4. Kurahashi, T., Onoda, M. and Hattori, T., Proc. 2nd Intr. Symp. on Micro Machine and Human Sience, pp173–176(1991).Google Scholar
5. Nyquist, R.A. and Kagel, R.O., INFRARED SPECTRA OF INORGANIC COMPOUNDS, (ACADEMIC PRESS, INC., 1971).Google Scholar
6. Pauling, L., The Nature of the Chemical Bond, (Cornell University Press, 1960).Google Scholar