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Structural properties of Eu doped GaN and its relation with luminescence properties

Published online by Cambridge University Press:  01 February 2011

Hyungjin Bang ,
Takahiro Maruyama ,
Shigeya Naritsuka  and
Katsuhiro Akimoto
Hyungjin Bang
Affiliation:
21st Century COE program “Nano Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Takahiro Maruyama
Affiliation:
21st Century COE program “Nano Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan Department of materials science and engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Shigeya Naritsuka
Affiliation:
21st Century COE program “Nano Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan Department of materials science and engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan
Katsuhiro Akimoto
Affiliation:
Institute of applied physics, University of Tsukuba, Tennodai 1–1–1, Tsukuba, Ibaraki, 305–8573, Japan
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Abstract

The Structural properties of Europium (Eu) doped GaN and its relation with optical properties were studied. Concentration quenching of the intensity of the Eu related luminescence observed when Eu concentration exceeds 3 at.%. In situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were carried out to study this luminescence quenching and it was discovered that there is close relationship between the luminescence intensity at 622 nm and structural properties. The cause of the concentration quenching is likely related to the polycrystalline growth as well as to the EuN formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.28
Copyright
Copyright © Materials Research Society 2005

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References

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