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Structural Evolution of Nanocrystalline Germanium Thin Films with Film Thickness and Substrate Temperature

Published online by Cambridge University Press:  01 February 2011

William B. Jordan ,
Eric D. Carlson ,
Todd R. Johnson  and
Sigurd Wagner
William B. Jordan
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Eric D. Carlson
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Todd R. Johnson
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The structure of germanium thin films prepared on glass by plasma enhanced chemical vapor deposition was characterized by Raman spectroscopy, atomic force microscopy (AFM) and field emission scanning electron microscopy (SEM). Crystallinity, surface roughness, and grain size were measured as functions of film thickness and deposition temperature. Grain nucleation was apparent for films as thin as 10 nm. Over the thickness range studied, grain size increased with film thickness, whereas average surface roughness started to increase with film thickness, but then remained fairly constant at approximately 1 nm for a film thickness greater than 25 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A6.5
Copyright
Copyright © Materials Research Society 2003

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