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Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  01 February 2011

Jinghong Li ,
Anthony Domenicucci ,
Dureseti Chidambarrao ,
Brian Greene ,
Nivo Rovdedo ,
Judson Holt ,
Drerren Dunn  and
Hung Ng
Jinghong Li
Affiliation:
jinghong@us.ibm.com, IBM, Micro-electyronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States, 845-894-3724
Anthony Domenicucci
Affiliation:
domenicu@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Dureseti Chidambarrao
Affiliation:
chidad@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Brian Greene
Affiliation:
bgreene@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Nivo Rovdedo
Affiliation:
rovedo@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Judson Holt
Affiliation:
judson@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Drerren Dunn
Affiliation:
dunnderr@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
Hung Ng
Affiliation:
ngy@us.ibm.com, IBM, Micro-electronics_STG, 2070 Route 52, Mail Stop 40E, Hopewell Junction, NY, 12533-6531, United States
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Abstract

Convergent electron beam diffraction (CBED) has been successfully applied to measure strain/stress in the channel area in PMOS semiconductor device with embedded SiGe (eSiGe) for 65nm technology. Reliable results of strain/stress measurements in the channel area have been achieved by good fitting of experimental CBED patterns with theoretical calculations. Stress measurements from CBED are in good agreement with simulations. A compressive stress as high as 823.9 MPa was measured in the <110> direction in the channel area of a PMOS device with eSiGe with 15% Ge and a thickness of 80nm. Stress measurements from CBED also confirm that the depth of the eSiGe and defects such as dislocation loops within the eSiGe relax strain/stress within the film and reduce strain/stress in the channel area.

Keywords

stress/strain relationshiptransmission electron microscopy (TEM)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D05-03
Copyright
Copyright © Materials Research Society 2006

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