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Stoichiometry Control in Molecular Beam Deposited Nanocrystalline SnO2 and TiO2 Thin Films

Published online by Cambridge University Press:  21 February 2011

H. Hoche
Affiliation:
Materials Science Dept., Darmstadt Technical University, Petersenstrasse 23, 64287 Darmstadt, Germany
H. Hahn
Affiliation:
Materials Science Dept., Darmstadt Technical University, Petersenstrasse 23, 64287 Darmstadt, Germany
F. Edelman
Affiliation:
Materials Science Dept., Darmstadt Technical University, Petersenstrasse 23, 64287 Darmstadt, Germany
R. Nagel
Affiliation:
Materials Science Dept., Darmstadt Technical University, Petersenstrasse 23, 64287 Darmstadt, Germany
P. Werner
Affiliation:
Max Planck Institute of Microstructure Physics, Halle/Saale D-06120, Germany
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Abstract

Molecular beam deposition (MB) of thin film metal oxide is prospective for application in gas sensor technology due to the well-controlled oxide molecular fluxes during creation of multi-oxide structures with improved characteristics. However, the MB process leads to some oxygen deficiency in the oxide. Further application of the MB technology (and, in general, the e-beam oxide deposition in vacuum) for processing of sensor structures needs the control and correction of the oxygen stoichiometry by adding in-situ atomic oxygen to the growing material or via the thin film oxidation after deposition.

Thin films (50 to 500 nm) of SnOx and TiOx were deposited on SiO2/(001)Si substrates at 100°C by MB from SnO2 and TiO2 sources. The film stoichiometry in the as-deposited state and after annealing in vacuum and in oxygen is characterized by XRD, TEM and RBS. Oxygen annealing transformed the strongly non-stoichiometric SnO (Romarchite) in the as-deposited state to Cassiterite, SnO2. Structure transformations in the TiO2 films during annealing are also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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