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Step Response of a-Si:H Photodiodes

Published online by Cambridge University Press:  15 February 2011

M. Mulato ,
M. Ramón  and
S. Wagner
M. Mulato
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton-NJ, 08544-5263, USA
M. Ramón
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton-NJ, 08544-5263, USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton-NJ, 08544-5263, USA
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Abstract

We correlate the dark current-transients of a-Si:H p-i-n photodiodes with solar cell performance and quantum efficiency. For devices with solar cell efficiency varying from 7.2 to 2.2 % subjected to ±1 V and a sampling frequency of 21 kHz: i) the reverse-bias charging time is shorter, with the initial charging time being reduced by ~ 1.5 μs, while the time for final current stabilization is reduced by - 5 μs.; ii) the forward-bias time for the onset of space charge limited current dominated regime is ~ 1 μs faster, the final current limit is achieved also in shorter time (~ 9 μs), and the individual final limit current is diminished by ~ 8 % due to carriers trapping, while the relative final limit current between different diodes is diminished by ~ 50 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 445
Copyright
Copyright © Materials Research Society 1999

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