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Spectroscopic Study of Titanium Oxide Thin Films at Low Temperatures by X-ray Diffraction, Raman Scattering, Fourier Transform Infrared Spectroscopy and Photoluminescence

Published online by Cambridge University Press:  01 February 2011

Zhiwei Zhao
Affiliation:
ezwzhao@ntu.edu.sg, Nanyang Technological University, School of Electrical and Electronic Engineering, Nanoelectronics I, S1-B3a-01,EEE, Nanyang Technological University,, Singapore, Singapore, 639798, Singapore, 65-67906127, 65-67933318
Beng Kang Tay
Affiliation:
ebktay@ntu.edu.sg, Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore, Singapore, 639798, Singapore
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Abstract

Titanium oxide thin films were prepared by filtered cathodic vacuum arc (FCVA) at low temperatures ranged from room temperature to 330°C. Spectroscopic study of the deposited films were carried out by X-ray diffraction, Raman Scattering, Fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL), respectively. The films remained amorphous up to the substrate temperature of 230°C. Nanocrystalline titanium oxide thin films occurred at 330°C with the strongest peak intensity from anatase (101) plane. The average grain size was around 20 nm and no rutile phase could be found. Various allowed vibrational frequencies (e.g. 152, 199, 399, 640 cm−1) in Raman spectra and Ti-O-Ti transverse mode at 436 cm−1 in the FTIR spectrum evidently verified the presence of anatase phase in the films at 330°C. Moreover, at room temperature only crystalline film exhibited a PL peak with the center at 379 nm in PL spectrum and the origin was discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1. Takahashi, T., Nakabayashi, H., Terasawa, T., and Masugata, K., J. Vac. Sci. Technol. A20, 1205 (2002).Google Scholar
2. Krol, R. van de and Goossens, A., J. Vac. Sci. Technol. A21, 76 (2002).Google Scholar
3. Pecharromán, C., Gracía, F., Holgado, Juan P., Ocanaňa, M., González-Elipe, Agustín R., Bassas, J., Santiso, J., and Figueras, A., J. Appl. Phys. 93, 4634 (2003).Google Scholar
4. Kiisk, V., Sildos, I., Suisalu, A., and Aarik, J., Thin Solid Films 400, 130 (2001).Google Scholar
5. Herman, G.S. and Gao, Y., Thin Solid Films 397, 157 (2001).Google Scholar
6. Zhao, Z.W., Tay, B.K., Huang, L., and Yu, G. Y., J. Phys. D: Appl. Phys. 37, 1701 (2004).Google Scholar
7. Zhao, Z.W., Tay, B.K. and Yu, G.Q., Appl. Opt. 43, 1281 (2004).Google Scholar
8. Cullity, B.D., Elements of X-ray Diffraction, 2nd ed. (Addison Wesley, Reading. MA 1978) p. 102.Google Scholar
9. Eckertova, L., Physics of Thin films (plenum, New York, 1977), Chap. 4.Google Scholar
10. Lewis, B., Nucleation and growth of Thin films (academic, New York, 1978).Google Scholar
11. Stringer, J., Acta. Metall. 8, 758 (1960).Google Scholar
12. Ocana, M., Garcia-Ramos, J. V., and Serna, C. J., J. Am. Ceram. Soc. 75, 2010 (1992).Google Scholar
13. Porto, S. P. S., Fleury, P. A. and Damen, T. C., Phys. Rev. B 154, 522 (1967).Google Scholar
14. Escobar-Alarcon, L., Haro-Poniatowski, E., Camacho-Lopez, M.A., Fernandez-Guasti, M., Jimenez-Jarquin, J., and Sanchez-Pineda, A., Appl. Surf. Sci. 137, 38 (1999).Google Scholar
15. Watanabe, M., Sasaki, S., and Hayashi, T., J. lum. 87–89, 1234 (2000).Google Scholar
16. Hosaka, N., Sekiya, T., and Kurita, S., J. Lum. 72–74, 874 (1997).Google Scholar
17. Amtout, A. and Lenonelli, R., Solid State Commun. 84, 349 (1992).Google Scholar
18. Haart, L.G.U. De and Blasse, G., J. Solid State Commun. 61, 35 (1986).Google Scholar