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Spectroscopic Determination of C2 Densities in AR/H 2/CH 4 and AR/H2/C60 Microwave Plasmas For Nanocrystalline Diamond Synthesis

Published online by Cambridge University Press:  10 February 2011

A. N. Goyette ,
J. E. Lawler ,
L. W. Anderson ,
D. M. Gruen ,
T. G. Mccauley ,
D. Zhou  and
A. R. Krauss
A. N. Goyette
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI 53706
J. E. Lawler
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI 53706
L. W. Anderson
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI 53706
D. M. Gruen
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
T. G. Mccauley
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
A. R. Krauss
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
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Abstract

We have measured the steady state concentration of gas phase C2 in Ar/H2/CH4 and Ar/H2/C60 microwave plasmas used for the deposition of nanocrystalline diamond films. High sensitivity white light absorption spectroscopy is used to monitor the C2 density using the d 3 Π ← a3Π (0,0) vibrational band of C2 as chamber pressure, microwave power, substrate temperature and feed gas mixtures are varied in both chemistries. Understanding how these parameters influence the C2 density in the plasma volume provides insight into discharge mechanisms relevant to the deposition of nanocrystalline diamond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 275
Copyright
Copyright © Materials Research Society 1998

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References

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