Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-30T16:14:48.815Z Has data issue: false hasContentIssue false

Spectral and Temporal Resolution of THz Detectors based on Quantum Hall Devices with various Geometries

Published online by Cambridge University Press:  01 February 2011

Nikolai G. Kalugin
Affiliation:
nkalugin@jewel.tamu.edu, Texas A&M University, Physics, TAMU 4242, College Station, TX, 77843-4242, United States
C. Stellmach
Affiliation:
c.stellmach@tu-bs.de, TU-Braunschweig, Germany
Yu. Vasilyev
Affiliation:
yuvas@tu-bs.de, A.F.Ioffe Instutute, Russian Federation
A. Hirsch
Affiliation:
a.hirsch@tu-bs.de, TU-Braunschweig, Germany
G. Hein
Affiliation:
g.hein@ptb.de, PTB-Braunschweig, Germany
B. E. Sǎgol
Affiliation:
g.nachtwei@tu-bs.de, PTB-Braunschweig, Germany
G. Nachtwei
Affiliation:
g.nachtwei@tu-bs.de, TU-Braunschweig, Germany
Get access

Abstract

Quantum Hall (QH) systems can work as very sensitive THz detectors. In this work we report on the spectral and temporal resolution of the QH THz photodetectors with different geometries. The spectral resolution of THz QH detectors is of the order of 1-3 meV depending on bias conditions. The temporal resolution of QH detectors depends on the device geometry. For Corbino-shaped detectors we have demonstrated the devices with response times from 10 ns to over 200 ns.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] von Klitzing, K., Dorda, G., Pepper, M., Phys. Rev. Lett. 45, 494497 (1980).10.1103/PhysRevLett.45.494Google Scholar
[2] Kawano, Y., Hisanaga, Y., Takenouchi, H., Komiyama, S., J. Appl. Phys. 89, 40374046 (2001).10.1063/1.1352685Google Scholar
[3] Hirakawa, K., Yamanaka, K., Kawaguchi, Y., Endo, M., Saeki, M., and Komiyama, S., Phys. Rev. B 63, 085320 (2001).10.1103/PhysRevB.63.085320Google Scholar
[4] Ivanov, Yu. L., and Vasilyev, Yu. B., Sov. Tech. Phys. Lett. 9, 264 (1983), andGoogle Scholar
Unterrainer, K., Kremser, C., Gornik, E., and Ivanov, Yu. L., Solid State Electron. 32, 15271535 (1989).10.1016/0038-1101(89)90268-2Google Scholar
[5] Kalugin, N. G., Vasilyev, Yu.B., Suchalkin, S.D., Nachtwei, G., Sağol, B.E., and Eberl, K., Phys. Rev. B 66, 085308 (2002).10.1103/PhysRevB.66.085308Google Scholar
[6] Kalugin, N. G., Nachtwei, G., Vasilyev, Yu. B., Suchalkin, S. D., Eberl, K., Appl. Phys. Lett. 81, 382384 (2002).10.1063/1.1492315Google Scholar
[7] Smirnov, K.V., Ptitsina, N.G., Vakhtomin, Yu.B., Verevkin, A.A., Goltsman, G.N., and Gershenzon, E.M., JETP Letters 71, 3135 (2000).10.1134/1.568271Google Scholar
[8] Hirsch, A., Diploma thesis, Technische Universitaet Braunschweig (2003)Google Scholar
[9] Stellmach, C., Hirsch, A., Kalugin, N.G., Hein, G., Sagol, B.E., and Nachtwei, G., Semicond. Sci. Technol. 19, S454456 (2004).10.1088/0268-1242/19/4/149Google Scholar
[10] Stellmach, C., Hirsch, A., Nachtwei, G., Vasilyev, Yu.B., Kalugin, N.G., and Hein, G., Appl. Phys. Lett. 87, 133504 (2005).10.1063/1.2061863Google Scholar
[11] Stellmach., C., Vasilyev, Y.B., Bonk, R., Hirsch, A., Kalugin, N.G., Hein, G., Becker, C.R., and Nachtwei, G., Proceedings of the HCIS-14, Chicago, USA (2005).Google Scholar