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SnO2:F with Very High Haze Value and Transmittance in Near Infrared Wavelength for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

Published online by Cambridge University Press:  17 June 2013

Masanobu Isshiki ,
Yasuko Ishikawa ,
Toru Ikeda ,
Takuji Oyama ,
Hidefumi Odaka ,
Porponth Sichanugrist  and
Makoto Konagai
Masanobu Isshiki
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221-8755, Japan Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan
Yasuko Ishikawa
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221-8755, Japan
Toru Ikeda
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221-8755, Japan
Takuji Oyama
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221-8755, Japan
Hidefumi Odaka
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221-8755, Japan
Porponth Sichanugrist
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan
Makoto Konagai
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, 2-12-1, Oookayama, Meguro-ku, Tokyo 152-8552, Japan
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Abstract

Low sheet resistance (high mobility) with high transmittance in all wavelength is required for front TCO. High haze value is also required for effective light trapping. For this purpose, we have combined F-doped SnO2 (FTO) with high mobility deposited by LPCVD and reactive ion etching (RIE) processed glass substrate. However, two problems have been found. (1) The mobility of FTO on RIE substrate dropped from that on flat glass (75 to 36 cm2/Vs). To avoid this drop, thicker film is needed. (2) To keep high transmittance with thicker film, lower carrier concentration is needed. But the mobility dropped with lower carrier concentration. In order to solve these constrains, we have adopted a stacked structure using thick non-doped layer of 2700 nm and thin F-doped layer of 500 nm. With this novel approach, we have successfully achieved the high mobility (80 cm2/Vs), low carrier concentration (2.2x1019 /cm3) and high haze value (77% at wavelength of 1000 nm) at the same time. This new developed high-haze SnO2 is a new promising TCO for thin-film Si solar cells.

Keywords

transparent conductortexturephotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 63 - 69
Copyright
Copyright © Materials Research Society 2013 

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References

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