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Simulations of molecular beam epitaxy growth of GaAs

Published online by Cambridge University Press:  17 March 2011

Z. Zhang  and
B. G. Orr
Z. Zhang
Affiliation:
Physics Department, The University of MichiganAnn Arbor, MI 48109-1120
B. G. Orr
Affiliation:
Physics Department, The University of MichiganAnn Arbor, MI 48109-1120
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Abstract

Numerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P5.3
Copyright
Copyright © Materials Research Society 2001

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