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Similarity of Vacancy Creation Mechanisms in Si Doped GaAs and Ga Doped ZnSe Observed by a Monoenergetic Positron Beam

Published online by Cambridge University Press:  03 September 2012

S. Tanigawa ,
J. L. Lee ,
L. Wei ,
M. Kawabe ,
T. Miyahma ,
H. Okuyama ,
K. Akimoto  and
Y. Mort
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
J. L. Lee
Affiliation:
Electronics and Telecommunications Research Institute, P. O. Box 8, Daedok Science Town, Daejon, Korea
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
M. Kawabe
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Miyahma
Affiliation:
Electronics and Telecommunications Research Institute, P. O. Box 8, Daedok Science Town, Daejon, Korea
H. Okuyama
Affiliation:
Research Center, Sony Corporation, 174 Fujitsuka, Hodogaya-ku, Yokohama 240, Japan
K. Akimoto
Affiliation:
Research Center, Sony Corporation, 174 Fujitsuka, Hodogaya-ku, Yokohama 240, Japan
Y. Mort
Affiliation:
Research Center, Sony Corporation, 174 Fujitsuka, Hodogaya-ku, Yokohama 240, Japan
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Abstract

The impurity effects on the creation of vacancies in GaAs and in ZnSe were investigated by monoenergetic positron beam measurements. In the case of the Si-doped MBE grown GaAs, the doping of Si atoms was found to enhance the creation of Ga site vacancies. The concentration of Ga vacancies was found to be proportional to the doped Si concentration. The observed linear relation between both concentrations supports the theoretical prediction on the creation of Ga vacancies in terms of the change in the Fermi-level position by the Si doping into GaAs and also suggests that Si atoms diffuse in GaAs as a neutral complex of Ga vacancy-Si pair rather than that of Si-Si pair. In the case of the Ga-doped MBE grown ZnSe, Zn vacancies were found to be generated in proportion to the concentration of doped Ga atoms. The observed similarity of the vacancy creation in the Si-doped GaAs and in the Ga-doped ZnSe can be well explained by the consideration of the charge neutrality condition around impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 597
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Kavanagh, K. L., Mayer, J. W., Magee, C. W., Sheets, J., Tong, J. and Woodal, J. M., Appl. Phys. Lett. 50, 516 (1985).Google Scholar
[2] Greinerand, M. E., Gibbons, J. F., J. Appl. Phys. 57, 5181 (1985).Google Scholar
[3] Deppe, D. G. and Holonyak, N. Jr, J. Appl. Phys. 64, R93 (1988).Google Scholar
[4] Akimoto, K., Miyajima, T. and Mori, Y., Jpn. J. Appl. Phys. 28, L531 (1989).Google Scholar
[5] Migita, M., Taike, A., Shiiki, M. and Yamamoto, H., J. Cryst. Growth 95, 835 (1990).Google Scholar
[6] Ohkawa, K., Migita, T. and Yamazaki, O., Extended Abstracts of the 18th Conference on Solid State Device and Materials, Tokyo, 1986 (Business Center for Academic Societies Japan, Tokyo, 1986) 635.Google Scholar
[7] Kröger, F. A. and Vink, H. J., in Solid State Physics, edited Seite, F. and Turnbull, D. (Academic, New York, 1956) vol. III, 310.Google Scholar
[8] Mandel, F., Phys. Rev. A134, 1073 (1964).CrossRefGoogle Scholar
[9] Watkins, G. D., Phys. Rev. Lett. 33, 223 (1974).Google Scholar
[10] Lee, K. M., Dang, L. S. and Watkins, G. D., Solid State Commun. 35, 527 (1980).Google Scholar
[11] Tanigawa, S., Iwase, Y., Uedono, A. and Sakairi, H., J. Nucl. Mater. 133 & 134, 463 (1985).Google Scholar
[12] Schultz, P. J. and Lynn, K. G., Rev. Mod. Phys. 60, 701 (1988).Google Scholar