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Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Xian Lin ,
Denis Endisch ,
Xiaomeng Chen  and
Alain Kaloyeros
Xian Lin
Affiliation:
Center for Advanced Thin Film Technology and Physics Department, The University at Albany-SUNY, Albany, New York 12222, Barry Arkles, Gelest Inc., Tullytown, Pennsylvania 19007
Denis Endisch
Affiliation:
Center for Advanced Thin Film Technology and Physics Department, The University at Albany-SUNY, Albany, New York 12222, Barry Arkles, Gelest Inc., Tullytown, Pennsylvania 19007
Xiaomeng Chen
Affiliation:
Center for Advanced Thin Film Technology and Physics Department, The University at Albany-SUNY, Albany, New York 12222, Barry Arkles, Gelest Inc., Tullytown, Pennsylvania 19007
Alain Kaloyeros
Affiliation:
Center for Advanced Thin Film Technology and Physics Department, The University at Albany-SUNY, Albany, New York 12222, Barry Arkles, Gelest Inc., Tullytown, Pennsylvania 19007
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Abstract

Films of silicon nitride are widely used in semiconductor technologies for very large scale integration (VLSI), thin film transistor (TFT), and solar cell applications. Current production technologies for silicon nitride use low pressure chemical vapor deposition (LPCVD) at temperatures > 700 °C or plasma enhanced chemical vapor deposition (PECVD) at temperatures below 450 °C. In this report, successful deposition of silicon nitride films by the low temperature thermal atmospheric pressure chemical vapor deposition (APCVD) method is described. Using a novel precursor tetraiodosilane (SiI4), deposition of silicon nitride has been achieved at temperature as low as 400 °C. Data pertaining to the dependence of film properties on deposition temperature are presented, along with a evaluation of the deposition rate, composition, chemical structure, and conformality of the resulting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 107
Copyright
Copyright © Materials Research Society 1998

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References

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