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Silicon and Silicon Dioxide Thermal Bonding

Published online by Cambridge University Press:  28 February 2011

Robert D. Black ,
Ernest L. Hall ,
Nathan Lewis ,
Robert S. Gilmore ,
Steven D. Arthur  and
Robert D. Lillquist
Robert D. Black
Affiliation:
General Electric Research and Development, P.O. Box 8, Schenectady, NY 12301
Ernest L. Hall
Affiliation:
General Electric Research and Development, P.O. Box 8, Schenectady, NY 12301
Nathan Lewis
Affiliation:
General Electric Research and Development, P.O. Box 8, Schenectady, NY 12301
Robert S. Gilmore
Affiliation:
General Electric Research and Development, P.O. Box 8, Schenectady, NY 12301
Steven D. Arthur
Affiliation:
General Electric Research and Development, P.O. Box 8, Schenectady, NY 12301
Robert D. Lillquist
Affiliation:
General Electric Research and Development, P.O. Box 8, Schenectady, NY 12301
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Abstract

The quality of the bond produced after mating oxidized and/or unoxidized silicon wafers has been studied using acoustic microscopy, infrared transmission thermographs, and transmission electron microscopy. The acoustic microscopy revealed that a significant number of unbonded regions (gaps) remain at the bond interface after bonding in oxygen, nitrogen, or high vacuum, and then annealing. These gaps could be virtually eliminated by a subsequent hyperbaric annealing step. The thermal imaging was found to have insufficient resolution to give a detailed picture of the bond quality. Transmission electron microscopy showed that an excellent bond could be produced when bonding clean silicon wafers, with only very small oxide or void bubbles present at the interface. Bonding two oxidized wafers resulted in a buried oxide layer with no detectable bond line. Mating an oxidized wafer to an unoxidized wafer produced a bonded silicon/oxide interface which was nearly indistiguishable from the wafer/thermal oxide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 495
Copyright
Copyright © Materials Research Society 1988

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