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Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

Published online by Cambridge University Press:  01 February 2011

Charles W. Teplin ,
Matthew Page ,
Eugene Iwaniczko ,
Kim M. Jones ,
Robert M. Ready ,
Bobby M. To ,
Helio M. Moutinho ,
Qi M. Wang  and
Howard M. Branz
Charles W. Teplin
Affiliation:
charles_teplin@nrel.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States, 303-384-6440, 303-384-6430
Matthew Page
Affiliation:
Matthew_Page@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Eugene Iwaniczko
Affiliation:
Eugene_Iwaniczko@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Kim M. Jones
Affiliation:
Kim_Jones@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Robert M. Ready
Affiliation:
Bob_Ready@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Bobby M. To
Affiliation:
Bobby_To@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Helio M. Moutinho
Affiliation:
Helio_Moutinho@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Qi M. Wang
Affiliation:
Qi_Wang@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Howard M. Branz
Affiliation:
Howard_Branz@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
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Abstract

We grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Keywords

Siepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A15-01
Copyright
Copyright © Materials Research Society 2006

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