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Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

Published online by Cambridge University Press:  01 February 2011

Charles W. Teplin ,
Matthew Page ,
Eugene Iwaniczko ,
Kim M. Jones ,
Robert M. Ready ,
Bobby M. To ,
Helio M. Moutinho ,
Qi M. Wang  and
Howard M. Branz
Charles W. Teplin
Affiliation:
charles_teplin@nrel.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States, 303-384-6440, 303-384-6430
Matthew Page
Affiliation:
Matthew_Page@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Eugene Iwaniczko
Affiliation:
Eugene_Iwaniczko@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Kim M. Jones
Affiliation:
Kim_Jones@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Robert M. Ready
Affiliation:
Bob_Ready@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Bobby M. To
Affiliation:
Bobby_To@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Helio M. Moutinho
Affiliation:
Helio_Moutinho@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Qi M. Wang
Affiliation:
Qi_Wang@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
Howard M. Branz
Affiliation:
Howard_Branz@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
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Abstract

We grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Keywords

Siepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A15-01
Copyright
Copyright © Materials Research Society 2006

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References

[1] Bergmann, R.B. and Werner, J.H., Thin Solid Films 403, 162 (2002).Google Scholar
[2] Findikoglu, A., Choi, W., Matias, V., Holesinger, T., Jia, Q. and Peterson, D., Adv. Mat. 17, 1527 (2005).Google Scholar
[3] Fuhs, W., Gall, S., Rau, B., Schmidt, M. and Schneider, J., Solar Energy 77, 961 (2004).Google Scholar
[4] Richardson, C.E., Kayes, B.M., Dicken, M.J. and Atwater, H.A., Amorphous and Nanocrystalline Silicon Science and Technology-2005. Symposium (Materials Research Society Symposium Proceedings Vol.862) 171 (2005).Google Scholar
[5] Eaglesham, D.J., J. Appl. Phys. 77, 3597 (1995).Google Scholar
[6] Eaglesham, D.J., Gossmann, H.J. and Cerullo, M., Phys. Rev. Lett. 65, 1227 (1990).Google Scholar
[7] Murty, M.V.R. and Atwater, H.A., Phys. Rev. B 49, 8483 (1994).Google Scholar
[8] Weir, B., Freer, B., Headrick, R., Eaglesham, D., Gilmer, G., Bevk, J. and Feldman, L., Appl. Phys. Lett. 59, 204 (1991).Google Scholar
[9] Nerding, M., Oberbeck, L., T.Wagner, A., Bergmann, R.B. and Strunk, H.P., J. Appl. Phys. 93, 2570 (2003).Google Scholar
[10] Straub, A., Harder, N.P., Huang, Y.D. and Aberle, A.G., J. Cryst. Growth 268, 41 (2004).Google Scholar
[11] Rau, B., Sieber, I., Selle, B., Brehme, S., Knipper, U., Gall, S. and Fuhs, W., Thin Solid Films 451–52, 644 (2004).Google Scholar
[12] Seitz, H. and Schroder, B., Solid State Commun. 116, 625 (2000).Google Scholar
[13] Teplin, C.W., Wang, Q., Iwaniczko, E., Jones, K.M., Al-Jassim, M., Reedy, R.C. and Branz, H.M., J. Cryst. Growth 287, 414 (2006).Google Scholar
[14] Thiesen, J., Iwaniczko, E., Jones, K.M., Mahan, A. and Crandall, R., Appl. Phys. Lett. 75, 992 (1999).Google Scholar
[15] Mason, M.S., Chen, C.M. and Atwater, H.A., Thin Solid Films 430, 54 (2003).Google Scholar
[16] Richardson, C., Mason, M. and Atwater, H., Thin Solid Films 501, 332 (2006).Google Scholar
[17] Teplin, C.W., Levi, D.H., Iwaniczko, E., Jones, K.M., Perkins, J.D. and Branz, H.M., J. Appl. Phys. 97, (2005).Google Scholar
[18] Teplin, C.W., Levi, D.H., Wang, Q., Iwaniczko, E., Jones, K.M. and Branz, H.M., Amorphous and Nanocrystalline Silicon Science and Technology-2004 (Materials Research Symposium Proceedings Vol.808) 209 (2004).Google Scholar
[19] Teplin, C.W., Iwaniczko, E., Jones, K.M., Reedy, R., To, B. and Branz, H.M., Amorphous and Nanocrystalline Silicon Science and Technology-2005. Symposium (Materials Research Society Symposium Proceedings Vol.862) 177 (2005).Google Scholar
[20] Karpenko, O.P., Yalisove, S.M. and Eaglesham, D.J., J. Appl. Phys. 82, 1157 (1997).Google Scholar
[21] Platen, J., Selle, B., Sieber, I., Brehme, S., Zeimer, U. and Fuhs, W., Thin Solid Films 381, 22 (2001).Google Scholar
[22] Schulze, G. and Henzler, M., Surf. Sci. 124, 336 (1983).Google Scholar
[23] Thiesen, J., Branz, H.M. and Crandall, R.S., Appl. Phys. Lett. 77, 3589 (2000).Google Scholar
[24] Copel, M. and Tromp, R.M., Phys. Rev. Lett. 72, 1236 (1994).Google Scholar
[25] Ji, J. and Shen, T., Phys. Rev. B 70, 115309 (2004).Google Scholar