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The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  10 August 2011

Chong Luo ,
Juan Li ,
He Li ,
Zhiguo Meng ,
Qian Huang ,
Shengzhi Xu ,
Hoi Sing Kwok  and
Shaozhen Xiong
Chong Luo
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Juan Li
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
He Li
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China
Zhiguo Meng
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Qian Huang
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Shengzhi Xu
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
Hoi Sing Kwok
Affiliation:
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China
Shaozhen Xiong*
Affiliation:
Institute of Photo-Electronics, Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, PR China
*
♣Corresponding author e-mail: xiongsz@nankai.edu.cn
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Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm2/V·s to 42.5 cm2/V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

Keywords

polycrystalannealingphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-07
Copyright
Copyright © Materials Research Society 2011

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References

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