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Role of Chemical Disordering In Eleci3O Irradiation Induced Amorphisation

Published online by Cambridge University Press:  26 February 2011

D.E. Luzzi
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamada-oka, Suita, Osaka 565 JAPAN Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60201
H. Mori
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamada-oka, Suita, Osaka 565 JAPAN
H. Fujita
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamada-oka, Suita, Osaka 565 JAPAN
M. Meshii
Affiliation:
Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60201
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Abstract

The electron irradiation induced crystalline to amorphous (C-A) transition was investigated in the Cu-Ti alloy system. As the transition is found to be dose dependent, the energy accumulated during the irradiation must make the crystal lattice unstable with respect to the amorphous state. In this paper, two possibilities for this energy accumulation, chemical disordering and the accumulation of point defects, is examined using the intermetallic compound CuTi2. Also, the effect of deviations from stoichiometry on the C-A transition is investigated in the compound CuTi. The Bragg-Williams long-rang order parameter, S, was found to decrease with electron dose. The rate of this decrease decreased with increasing temperature. At a critical temperature, the maximum obtainable degree of chemical disordering critically decreased. This critical temperature coincided with the critical temperature for the C-A transition, favoring the chemical disordering as the primary driving force. In CuTi, the C-A transition was hindered when there existed a Cu-rich deviation from stoichiometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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