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Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces

Published online by Cambridge University Press:  15 February 2011

Y. Chen ,
Z. Liliental-Weber ,
J. Washburn ,
J.F. Klem  and
J.Y. Tsao
Y. Chen
Affiliation:
Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, CA 94720
J.F. Klem
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
J.Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

Transmission electron microscopy is applied to investigate the effect of post-annealing on misfit dislocations in an In0.2Ga0.8As/GaAs(001) heterostructure. An orthogonal array of 60º dislocations along [110] and [110] directions was observed in the interfaces of the samples grown by MBE at 520 ºC. When the as-grown samples were annealed at temperatures ranging from 600 to 800 ºC, the 60º dislocations were gradually reoriented by dislocation reactions occurring at the 90º intersections followed by nonconservative motion driven by dislocation line tension and the residual elastic misfit strain. The final result of this process was a dislocation array lying along [100] and [010] directions. The reoriented u=<100> dislocation has a Burgers vector , which is the same as that of 60º dislocation, but the edge component of its Burgers vector in the (001) interfacial plane is larger than that of 60º dislocation by a factor of , resulting in a greater contribution to elastic strain relaxation. This nonconservative reorientation of 60º dislocations to form the u=<100> dislocations represents a new strain relaxation mechanism in diamond or zinc blende semiconductor heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 405
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Fritz, I.J., Myers, D.R., Vawter, G.A., Brennan, T.M., and Hammons, B.E., Appl. Phys. Lett. 58, 1608 (1991).CrossRefGoogle Scholar
2 Hull, D. and Bacon, D.J., Introduction to Dislocations. 3rd ed. (Pergamon Press, Oxford, 1984), Chap. 6, pp. 133–136.Google Scholar
3 Matthews, J.W., J. Vac. Sci. Technol. 12, 126 (1975).CrossRefGoogle Scholar
4 Tsai, H.L. and Lee, J.W., Appl. Phys. Lett. 51, 130 (1987).CrossRefGoogle Scholar
5 Bonar, J.M., Hull, R., Walker, J.F., and Malik, R., Appl. Phys. Lett. 60, 1329 (1992).CrossRefGoogle Scholar