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Relationship Between Structure and Luminescent Properties of Epitaxial Grown Y2O3:Eu Thin Films on LaAlO3 Substrates

Published online by Cambridge University Press:  10 February 2011

H-J. Gao
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
G. Duscher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
X.D. Fan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611-6400
K.G. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611-6400
P.H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611-6400
R.K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611-6400
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Abstract

Cathodoluminescence images of individual pores have been obtained at nanometer resolution in europium-activated yttrium oxide (Y2O3:Eu) (001) thin films, epitaxially grown on LaA1O3 (001) substrates. Comparison with Z-contrast images, obtained simultaneously, directly show the “dead layer” to be about 5 nm thick. This “dead layer” is the origin of the reduced emission efficiency with increasing pore size. Pore sizes were varied by using different substrate temperatures and laser pulse repetition rates during film growth. These films are epitaxially aligned with the substrate, which is always Al terminated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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