Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-17T21:26:03.169Z Has data issue: false hasContentIssue false
  • English
  • Français

Recombination Under Double Injection Conditions in a-Si:H Based Diodes.

Published online by Cambridge University Press:  28 February 2011

R. Konenkamp  and
Arun Madan
R. Konenkamp
Affiliation:
Hahn-Meitner-Institut für Kernforschung Berlin, I Berlin 39, FRG
Arun Madan
Affiliation:
Solar Energy Research Institute, Golden, CO 80401, USA
Get access

Abstract

The junction recovery technique is used to investigate recombination parameters and kinetics in thin film a-Si:H diodes. It is found that double injection occurs in most of the p-i-n type samples at sufficient forward bias and that the recovery currents are dominated by the extraction of trapped holes from the valence bandtail. The mobility-lifetime product of the recovered carriers is seen to be strongly dependent on the dopant concentration in the active layers of the devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 89
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

(1) Okamoto, H., Kida, H., Nonomura, S., Fukumoto, K. and Hamakawa, Y., J. Appl. Phys. 54, 3236 (1983).CrossRefGoogle Scholar
(2) KRnenkamp, R., Hermann, A. and Madan, A., Appl. Phys. Lett. 46, 405 (1985).CrossRefGoogle Scholar
(3) Kdnenkamp, R., Hermann, A. M. and Madan, A., J. Non-Cryst. Sol. 66, 249 (1984).CrossRefGoogle Scholar
(4) Snell, A. J., Spear, W. E. and LeComber, P. G., Phil. Mag. B 43, 407 (1981).CrossRefGoogle Scholar
(5) Silver, M., Giles, N. C., Snow, E., Shaw, M. P., Canella, V. and Adler, D., Appl. Phys Lett. 41, 937 (1982).CrossRefGoogle Scholar
(6) Benda, H., Hoffminn, A. and Spenke, E., Solid State Electron. 8, 887 (1965).CrossRefGoogle Scholar
(7) Jackson, W.B. and Amer, N.M., Phys. Rev. B 25, 5559 (1982).CrossRefGoogle Scholar
(8) Kirby, P. B., Paul, W., Lee, C., Lin, S., B. von Roedern and Weisfield, R. L., Phys. Rev. B 28, 3635 (1983).CrossRefGoogle Scholar
(9) Spear, W. E., Steamers, H. L. and Mannsperger, H., Phil. Mag. B 48, L49 (1983).CrossRefGoogle Scholar
(10) McMahon, T. J. and Kdnenkamp, R., Proc. 16th IEEE Photvolt. Spec. Conf, 1389 (1982).Google Scholar
(11) Madan, A., McMahon, T.J., Pickin, W. and Kinenkamp, R., submitted for publication.Google Scholar