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Radiative and Non-Radiative Processes for the light Emission from Porous Silicon

Published online by Cambridge University Press:  28 February 2011

J. C. Vial ,
A. Bsiesy ,
G. Fishman ,
F. Gaspard ,
R. Herino ,
M. Ligeon ,
F. Muller ,
R. Romestain  and
R. M. Macfarlane
J. C. Vial
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
A. Bsiesy
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
G. Fishman
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
F. Gaspard
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
R. Herino
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
M. Ligeon
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
F. Muller
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
R. Romestain
Affiliation:
L.S.P. CNRS-Université J. Fourier de Grenoble, B.P. 87 -38402 St Martin d'Héeres —, France
R. M. Macfarlane
Affiliation:
I.B.M. Almaden Research Center, 650 Harry road, San Jose California. 95120-, USA
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Abstract

Highly porous silicon, well passivated via an anodic oxidation process, is a stable and efficient visible light emitter showing a 3% photoluminescence efficiency at room temperature. Luminescence decay times are on the order of 100 μs at room temperature and 10 ms at low temperature. Above room temperature the de-excitation is dominated by non-radiative processes well describe by a tunnelling escape of carriers from confined regions. The “anomalous” luminescence behaviour showing a dramatic increase of the lifetimes upon cooling associated with a decrease of the intensity is explained by the temperature dependence of the effective radiative recombination rates due to a population redistribution among two excited states with very different radiative relaxation rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 241
Copyright
Copyright © Materials Research Society 1993

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References

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