Published online by Cambridge University Press: 01 January 1992
Within a tight-binding molecular dynamics scheme we investigate pure amorphous silicon (a-Si) obtained by direct quenching from the melt. Using different rates for the cooling process, we demonstrate that both structural and electronic properties of a-Si depend on the sample preparation. Possible size-effects are also investigated using 64- and 216-atom supercells. Finally, we discuss the reliability and transferability of the present scheme for large scale simulations of covalent materials.