Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-12T19:58:07.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Pyroelectric Properties of Alanine Doped TGS Single Crystalline Thick Films under Constant Electric Stress

Published online by Cambridge University Press:  17 March 2011

Lucian Pintilie ,
Ion Matei ,
Ioana Pintilie ,
Horia V. Alexandru  and
Ciceron Berbecaru
Lucian Pintilie
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania, Fax: +401- 4930267; E-mail: pintilie@alpha1.infim.ro
Ion Matei
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania, Fax: +401- 4930267
Ioana Pintilie
Affiliation:
National Institute of Materials Physics, Atomistilor 105 bis, P.O. Box MG-7, 76900 Bucharest-Magurele, Romania, Fax: +401- 4930267
Horia V. Alexandru
Affiliation:
Faculty of Physics, University of Bucharest, Romania P.O.Box 74-165, Bucharest, Romania, Phone / Fax: +401 – 7465066; E-mail: horia@alpha1.inphim.ro
Ciceron Berbecaru
Affiliation:
Faculty of Physics, University of Bucharest, Romania P.O.Box 74-165, Bucharest, Romania, Phone / Fax: +401 – 7465066
Get access

Abstract

Pyroelectric properties of triglycine sulfate (TGS) thick films, separately doped with L and D alanine were investigated. Internal bias field of about 1 kV/cm, induced by the two dopants, stabilize the polarization in the opposite direction on the ferroelectric axis. Pyroelectric current (under constant stress) was recorded with a computer controlled Keithley 6517 electrometer, crossing up and down the Curie point. A reverse external electric field was applied on doped materials during heating, crossing up the Curie point. It is shown that the pyroelectric coefficient can be increased about four times at room temperature under un optimized DC electric field applied on the pyroelectric wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.13.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lang, S.B. and Das-Gupta, D.K., Ferroelctrics Review 2, 266–292, (2000)Google Scholar
2. Alexandru, H.V. and Berbecaru, C., Crystal Res.Technol. 30, 307 – 315, (1995).Google Scholar
3. Alexandru, H.V., Berbecaru, C., Logofatu, B. and Stanculescu, Anca, J. Optoelectronic and Advanced Materials 1, 57–63, (1999).Google Scholar
4. Lines, M.E. and Glass, A.M., Principles and Applications of Ferroelectric Materials and related materials, (Clarendon Press, Oxford, 1977), pag 141.Google Scholar
5. Pintilie, L. and Constantin, C., Romanian J. of Physics 38, 925–933, (1993).Google Scholar
6. Costache, M., Matei, I., Pintilie, L., Alexandru, H.V. and Berbecaru, C., J. Optoelectronic and Advanced Materials 3, 75–81, (2001).Google Scholar
7. Pintilie, L., Pintilie, I. and Matei, I., J.Appl.Phys. 88, 7264–7271, (2000).Google Scholar
8. Chynoweth, A.G., J.Appl.Phys. 27, 78–84, (1956).Google Scholar
9. Chynoweth, A.G., Pys Rev. 102, 705–714, (1956).Google Scholar