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Properties and Thermal Behaviour of Si3N4 Thin Films

Published online by Cambridge University Press:  22 February 2011

O. Knotek
Affiliation:
Materials Science Institute, Aachen University of Technology, D-52056 Aachen
F. LÖffler
Affiliation:
Materials Science Institute, Aachen University of Technology, D-52056 Aachen
L. Wolkers
Affiliation:
Materials Science Institute, Aachen University of Technology, D-52056 Aachen
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Abstract

The applications of thin film technologies are increasing. A variety of different ceramic and hard coating materials are deposited. Silicon nitride is one of the materials which seems to be quite interesting for the use as coating material. An use as a wear and corrosion protective coating seems to be conceivable. Silicon nitride is known to have a good thermalshock resistivity, thermal and chemical stability and good mechanical and wear resistant properties. If these properties are also given for deposited metastable PVD Si-N-coatings has to be evaluated yet.

This paper describes the influence of different coating process parameters of the MSIP process like DC and RF mode, reactive and non reactive sputter processes and target orientation on the properties of silicon nitride films. It is shown, that coatings deposited with a 100 oriented single crystal target have the highest deposition rate and the best mechanical properties. The thermal stability of these thin films is insufficient although it can be improved by a carbon incorporation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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