Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-17T19:38:56.562Z Has data issue: false hasContentIssue false
  • English
  • Français

Polarized Raman Scattering Study of ZnGeP2 Single Crystals

Published online by Cambridge University Press:  10 February 2011

Spirit Tlali ,
Howard E. Jackson ,
M. C. Ohmer ,
P. G. Schunemann  and
T. M. Pollak
Spirit Tlali
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati OH 45221-0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati OH 45221-0011
M. C. Ohmer
Affiliation:
Wright Laboratory, Wright-Patterson AFB, OH 45433
P. G. Schunemann
Affiliation:
Lockheed Sanders, Nashua, NH 03061
T. M. Pollak
Affiliation:
Lockheed Sanders, Nashua, NH 03061
Get access

Abstract

Raman scattering experiments on high quality ZnGeP2 single crystals grown by the seeded horizontal dynamic gradient technique have been carried out. Polarized Raman spectra were obtained in the backscattering geometry at both room and low temperatures for several crystal orientations and compared with group theoretical predictions. Raman spectra from as-grown and annealed samples display distinctive differences which were explored by utilizing two different excitation wavelengths: 514.3 nm and 632.8 nm; the observed differences are attributed to a surface interdiffuasion effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 543
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See, for instance, Bundi, P. A., Ezzo, K., Schunemann, P. G., Minnigh, S., McCarthy, J. C., and Pollak, T. M., in OSA Proceedings on Advanced Solid State Lasers, ed. Dube, G. and Chase, L. L., 10, 335 (1993).Google Scholar
2. See, for instance, Schunemann, P. G., Budni, P. A., Knights, M. G., Pollak, T. M., Chicklis, E. P., and Marquardt, C. L., in OSA Proceedings on Advanced Solid State Lasers, ed. Pinto, A. A. and Fan, T. Y., 15, 166 (1993).Google Scholar
3. Marquardt, C. L., Cooper, D. G., Budni, P. A., Knights, M. G., Schepler, K. L., DeDomenico, R., and Catella, G. C., Appl. Opt. 33, 3192 (1994).Google Scholar
4. Roelofs, M. G., J. Appl. Phys., 65, 4976 (1989).Google Scholar
5. Andreev, Y. M. et al., Sov. J. Quant, Elect. 14, 1022 (1984).Google Scholar
6. Shunemann, P. G. and Pollak, T. M., in OSA Proceedings on Advanced Solid State Lasers, ed. Dube, G. and Chase, L. L., 10, 332 (1991).Google Scholar
7. For a complete version of these experiments, including low temperature results and a symmetry analysis of the Raman response, see Tlali, S., Jackson, H. E.. Ohmer, M. C., Schunemann, P. G., and Pollak, T. M., to be published.Google Scholar