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Plasma Etching Characteristics of Sputtered Tungsten Films

Published online by Cambridge University Press:  25 February 2011

S. Franssila ,
J. M. Molarius  and
J. Saarilahti
S. Franssila
Affiliation:
Semiconductor Laboratory, VTT, Olarlnluoma 9, SF-02200 Espoo, Finland
J. M. Molarius
Affiliation:
Semiconductor Laboratory, VTT, Olarlnluoma 9, SF-02200 Espoo, Finland
J. Saarilahti
Affiliation:
Semiconductor Laboratory, VTT, Olarlnluoma 9, SF-02200 Espoo, Finland
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Abstract

The relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, wherasthe etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 341
Copyright
Copyright © Materials Research Society 1992

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References

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