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Physical Properties of Two Metastable States of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

G.K. Hubler ,
C.N. Waddell ,
W.G. Spitzer ,
J.E. Fredrickson  and
T.A. Kennedy
G.K. Hubler
Affiliation:
Naval Research Laboratory, Washington, D.C.;
C.N. Waddell
Affiliation:
Physics and Materials Science Departments, University of Southern California, Los Angeles, California;
W.G. Spitzer
Affiliation:
Physics and Materials Science Departments, University of Southern California, Los Angeles, California;
J.E. Fredrickson
Affiliation:
Physics-Astronomy Department, California State University, Long Beach, California
T.A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, D.C.;
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Abstract

Characterization of the two metastable states of amorphous Si produced by ion implantation is extended to include electron paramagnetic resonance, fundamental absorption edge, and density measurements in addition to infrared reflection. It is found that the properties of the two a-Si states are not dependent upon the mass of the incident ion (12C, 29Si, 31p, 120Sn) or upon the anneal temperature for 400°≤TA≤600°C. The dangling-bond density drops about a factor of 2, the absorption coefficient drops by more than a factor of 5, but the density does not change when the a-Si makes a transition between the two states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 217
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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