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Photostimulated Changes of Electrical Characteristics of Ag/CdTe Thin Film Structures

Published online by Cambridge University Press:  01 February 2011

T.D. Dzhafarov  and
M. Caliskan
T.D. Dzhafarov
Affiliation:
Department of PhysicsYildiz Technical University, Davutpasa, 34210 Istanbul, Turkey Institute of Physics, Azerbaijan National Academy of Sciences, Javid str,Az-1143 Baku, Azerbaijan
M. Caliskan
Affiliation:
Department of PhysicsYildiz Technical University, Davutpasa, 34210 Istanbul, Turkey
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Abstract

Electrical, optical and structural properties of Ag/CdTe structures exposed to thermal (in dark) and photoannealing (under illumination) have been studied. The effective diffusion coefficie nt of Ag in CdTe films have been estimated from resistance versus duration of annealing curves. In the range of 280-420°C the effective coefficient of thermal diffusion (Dt) and photodiffusion (Dph) are described as Dt= 1.9x105exp (-1.60/kT) and Dph =8.7x103exp(-1.36/kT). The acceleration of Ag diffusion under illumination was tentatively attributed to photoionization of Ag increasing the interstitial flux of silver. Ag/CdTe structures exposed to annealing were characterized by X-ray diffraction (XRD), I-V, C-V, conductivity-temperature and optical transmission measurements. In XRD patterns of annealed Ag/CdTe structures, besides the intensive (111) peak of cubic CdTe, the weak peaks of Ag2Te phase are also present. The temperature dependence of conductivity of annealed Ag/CdTe structures showed the energy levels 0.13 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.13
Copyright
Copyright © Materials Research Society 2005

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