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A Photoluminescence Study of Cd Related Centers in InP

Published online by Cambridge University Press:  28 February 2011

V. Swaminathan ,
V. M. Donnelly  and
J. Long
V. Swaminathan
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
V. M. Donnelly
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. Long
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We report the results of a low temperature photoluminescence study of Cd related centers in InP. Besides the previously identified 1.365 eV band a new Cd related band is reported. The peak position of this band lies in the energy ranqe 1.2-1.3 eV at 5.5K dependinq upon the excitation intensity. The peak position of the bands shifts to higher energy with increasing excitation intensity but the change in the peak energy per decade chanqe in excitation intensity is much larger (50 meV) for the lower energy band compared to the 1-2 meV shift for the 1.365 eV band. Both bands exhibit thermal quenching of luminescence above lOOK with an activation energy of 54±4 meV which is comparable to the ionization energy for the substitutional Cd acceptor, CdIn. From this we infer that both bands involve the CdIn acceptor in the recombination process. While the excitation dependence of the bands suggests a donor-to-acceptor pair recombinaton for their origin, we present arguments to show that the larger shift of the peak energy of the 1.2-1.3 eV band with excitation intensity is perhaps a consequence of the involvement of a deep donor in its origin as opposed to a shallow donor in the 1.365 eV band. It is suggested that the deep donor is related to Cd and possible centers are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 365
Copyright
Copyright © Materials Research Society 1985

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References

1. Chand, N. and Houston, P. A., J. Electronic Mat. 11, 37 (1982) and references there in.Google Scholar
2. Kuebart, W., Hildebrand, O., Marten, H. W. and Arnold, N., in GaAs and Related Compounds, Inst. of Phys. Conf. Ser. 65, 597 (1982).Google Scholar
3. Dutt, B. V., Chin, A. K. and Bonner, W. A., J. Electrochem. Soc. 128, 2014 (1981) and references there in.Google Scholar
4. Chevrier, J., Horache, E., Goldstein, L. and Linh, N. T., J. Appl. Phys. 53, 3247 (1982).Google Scholar
5. Perronnet, A., Magnabal, J., Sigogne, D., Huet, D. and Benoit, J., J. de Physiq. Colloq. 5 43, 73 (1982).Google Scholar
6. Hilsum, C., Fray, S. and Smith, C., Solid State Elect., 7, 1057 (1969).Google Scholar
7. White, A. M., Dean, P. J., Fairhurst, K. M., Bardéley, W., Williams, E. W. and Day, B., Solid State Comm., 11, 1099 (1972).Google Scholar
8. Thomas, O.G., Gershenzon, M. and Trumbore, F. A., Phys. Rev. 133, 269 (1964).Google Scholar
9. Hess, K., Stath, N. and Benz, K. W., J. Electrochem. Soc., 121, 1208 (1974).Google Scholar
10. Williams, E. W., Elder, W., Astels, M. G., Webb, M., Mullin, J. B., Straughan, B. and Tufton, P. J., J. Electrochem. Soc., 120, 1741 (1973).CrossRefGoogle Scholar
11. Skolnick, M. S. and Dean, P. J., J. Phys. C 15, 5863 (1982).Google Scholar
12. Dingle, R., Phys. Rev., 184, 788 (1969).Google Scholar
13. Roder, O., Heim, U. and Pilkuhn, M. H., J. Phys. Chem. Solids, 31, 2625 (1970).Google Scholar
14. Dean, P. J., in Progress in Solid State Chemistry, ed. McCaldin, J. O. and Somorjai, G. (Pergamon, New York, 1973), Vol. 8.Google Scholar
15. Dobrego, V. P. and Shlimak, I. S., Phys. Stat. Solid 33, 805 (1969).Google Scholar
16. Redfield, D., Wittke, J. P. and Pankove, J., Phys. Rev. B2, 1830 (1970).CrossRefGoogle Scholar
17. Alferov, Zh. I., Andreev, V. M., Garbuzov, D. Z. and Trukan, M. K., Sov. Phys. Semicond. 6, 1718 (1973).Google Scholar
18. Yu, P. W., J. Appl. Phys. 48, 5043 (1977), and references therein.CrossRefGoogle Scholar
19. Swaminathan, V., Anthony, P. J. Zilko, J. L., Sturge, M. D. and Schumaker, N. E., J. Appl. Phys. 52, 5603 (1981).Google Scholar
20. Mazzaschi, J., Barrau, J., Brabant, J. C., Brousseau, M., Maaref, H., Voillot, F. and Boissy, M. C., Rev. Phys. Appl. 15, 861 (1980).CrossRefGoogle Scholar
21. Temkin, H., Dutt, B. V. and Bonner, W. A., Appl. Phys. Lett., 38, 431 (1981).Google Scholar
22. J. Schneider in Semi-insulting III-V Materials eds. Ebeid, S. Makram and Tuck, B. (Shiva, London, 1982), p. 144.Google Scholar
23. Kennedy, T. A. and Wilsey, N. D., Appl. Phys. Lett. 44, 1089 (1984).Google Scholar