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Photoluminescence from Microcrystalline Silicon and Related Materials

Published online by Cambridge University Press:  28 February 2011

M. Rlickschloss ,
B. Landkammer ,
O. Ambacher  and
S. Vepřek
M. Rlickschloss
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
B. Landkammer
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
O. Ambacher
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
S. Vepřek*
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
*
*) Author to whom correspondence should be addressed
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Abstract

Intense photoluminescence has been obtained from nanocrystal-line silicon prepared in completely dry processing by the optimizing the crystallite size and the chemical passivation of the grain boundaries due to a controlled postoxidation of the plasma deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 65
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990)Google Scholar
[2] Lehmann, V. and Gösele, U., Appl. Phys. Lett. 58, 856 (1991)Google Scholar
[3] Mater. Res. Soc. Proc., Fall Meeting, Boston December 1992 Maters. Res. Symp. Proc. 283, in pressGoogle Scholar
[4] Petrova-Koch, V., Muschnik, T., Kux, A., Meyer, B.K. and Koch, F., Appl. Phys. Lett. 61, 943 (1992)Google Scholar
[5] Shih, S., Tsai, C., Li, K.-H., Jung, K.H., Campbell, J.C. and Kwong, D.L., Appl. Phys. Lett. 60(1992)633 Google Scholar
[6] Halimaoui, A., Oules, C. and Bomchil, G., Appl. Phys. Lett. 59, 304 (1991)Google Scholar
[7] Bustarret, E., Ligeon, M., Bruyere, J.C., Muller, F., Hérino, R., Gaspard, F., Ortega, L. and Stutzmann, M., Appl. Phys. Lett. 61, 1552 (1992)Google Scholar
[8] Wolford, D.J., Reimer, J.A. and Scott, B.A., Appl. Phys. Lett. 42, 370 (1983)Google Scholar
[9] Carius, R., Fischer, R., Holzenkampfer, E. and Stucke, J., J. Appl. Phys. 524241(1981)Google Scholar
[10] Komuro, S., Aoyagi, Y., Segawa, Y. and Namba, S., J. Appl. Phys. 58, 943 (1985)Google Scholar
[11] Veprek, S. and Sarott, F.-M., (1980) unpublished resultsGoogle Scholar
[12] Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A. and Hakagiri, T., Appl. Phys. Lett. 56, 2379 (1990)Google Scholar
[13] Ito, T., Ohta, T. and Hiraki, A., Jpn. J. Appl. Phys. 31, L1(1992)Google Scholar
[14] Osaka, Y., Tsunetomo, K., Toyomura, F., Myoren, H. and Kohno, K., Jpn. J. Appl. Phys. 31, L365(1992)Google Scholar
[15] Veprek, S. and Marecek, V., Solid-state Electron. 11, 683 (1968)Google Scholar
[16] Veprek, S. and Heintze, M., Plasma Chem. Plasma Process. 10, 3 (1990)Google Scholar
[17] Veprek, S., Iqbal, Z. and Sarott, F.-A., Phil. Mag. B 45, 137 (1982)Google Scholar
[18] Konuma, M., Curtins, H., Sarott, F.-A. and Veprek, S., Phil. Mag. B 55, 377(1987)Google Scholar
[19] Veprek, S., Sarott, F.-A. and Iqbal, Z., Phys. Rev. B 36, 3344 (1987)Google Scholar
[20] Veprek, S., Mater. Res. Soc. Proc. 164, 39 (1990)Google Scholar
[21] The sample has been provided by Dr. V. Petrova-Koch [4]Google Scholar
[22] Kux, A., Muller, F. and Koch, F., this proceedings, paper F14.13 Google Scholar
[23] Muschik, Th., Petrova-Koch, V., Kux, A. and Koch, F., Mater. Res. Soc. Proc. 164, F14.17 Google Scholar
[24] Trunkin, A.N. and Plaudis, A.E., Sov. Phys. Solid State 21, 644 (1979)Google Scholar