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Photo-Induced Growth of Low Dielectric Constant Porous Silica Film at Room Temperature

Published online by Cambridge University Press:  17 March 2011

Jun-Ying Zhang  and
Ian W. Boyd
Jun-Ying Zhang
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK E-mail j.zhang@ee.ucl.ac.uk, Tel: +44 (0) 20 7419 3196, Fax: +44 (0) 20 7388 9325
Ian W. Boyd
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
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Abstract

We report low temperature (25-200°C) photo-assisted sol-gel processing for the formation of porous silicon dioxide films on Si (100) substrates using 172 nm radiation from an excimer lamp. The effects of substrate temperature and irriadation time on the properties of the films formed have been studied using ellipsometry, Fourier transform infrared spectroscopy (FTIR), and electrical measurements. The FTIR spectra revealed the presence of a Si-O-Si stretching vibration peak at 1070 cm-1 after UV irradiation at 200°C. This is similar to that recorded for oxides grown by thermally oxidation of silicon at temperatures between 600-1000°C. Capacitance measurements indicated that the dielectric constant values of the films, found to be between 1.7-3.3, strongly depended on the substrate temperature during irradiation. Dielectric constant values as low as 1.7 were readily achievable at room temperature. These results show that the photochemical induced effects initiated by the UV radiation enable both reduced processing times and reduced processing temperatures to be used.

Keywords

Photo-assisted sol-gel processingexcimer lamp, porous SiO2 filmlow dielectric constant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.17.1
Copyright
Copyright © Materials Research Society 2000

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