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Photodegradation in a-Si:H Prepared by Hot-Wire CVD as a Function of Substrate and Filament Temperatures

Published online by Cambridge University Press:  17 March 2011

Daxing Han ,
Guozhen Yue ,
Jing Lin ,
Hitoe Habuchi ,
Eugene Iwaniczko  and
Qi Wang
Daxing Han
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Guozhen Yue
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Jing Lin
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Hitoe Habuchi
Affiliation:
Gifu National College of Technology, Sinsei-cho, Motosu-gun, Gifu, 501-04, Japan
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
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Abstract

We have studied light-soaking effects, such as photoconductivity (PC) degradation kinetics, the changes of conductivity activation energy, Ea, and the defect density of states (DOS) in a-Si:H films deposited by hot-wire CVD. Films were deposited in a substrate temperature range from 280 to 440 °C for filament temperatures of 1900 and 2100 °C. We find that (a) the photodegradation kinetics does not follow the stretched exponential rule for all of the samples; (b) the Fermi level position moves up after light-soaking for most samples; and (c) the metastable defect DOS deduced from sub-band gap absorption is not consistent with that deduced from the electron mobility-lifetime product. The results are discussed according to the possible mechanism in which charged defects exist in hot-wire a-Si:H films.a

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A22.7
Copyright
Copyright © Materials Research Society 2000

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References

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