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Phase Transformation and Microstructural Properties in Sputtered Vs. CVD WSi, Films

Published online by Cambridge University Press:  10 February 2011

A. Dornenicucci ,
C. Dehm ,
S. Loh ,
L. A. Clevenger ,
C. Dziobkowski ,
C. Cabral ,
C. Lavole  and
J. Jorden-Sweet
A. Dornenicucci
Affiliation:
IBM Microelectronics, Hopewell Jct., N.Y. 12533
C. Dehm
Affiliation:
Siemens AG, Hopewell Jct, N.Y. 12533
S. Loh
Affiliation:
IBM Microelectronics, Hopewell Jct., N.Y. 12533
L. A. Clevenger
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Dziobkowski
Affiliation:
IBM Microelectronics, Hopewell Jct., N.Y. 12533
C. Cabral
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Lavole
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
J. Jorden-Sweet
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

CVD WSi, films produced by dichlorosilane reduction at 570°C and WSi, films sputter deposited at 50°C were characterized by in situ x-ray diffraction (IS-XRD), in situ resistivity (ISRes), in situ stress (IS-stress), ex situ/in situ transmission electron microscopy (EX/IS-TEM) and ex situ Auger electron spectrometry (EX-AES) over the temperature range 25–1100°C. The CVD films were crystalline after deposition, with columnar grains in the hexagonal phase and a Si:W atomic ratio of 2.6:1. The CVD films exhibited a sharp hexagonal to tetragonal phase transformation near 750°C. The final grain size was greater than the film thickness, with no evidence of voiding. Avrami analyses gave traditional curves with n values of 2 for the phase transition in the CVD films. In comparison, the sputtered films were amorphous as deposited (Si:W atomic ratio of 2.8:1 ) and crystallized to a different hexagonal phase microstructure than did the CVD films. The sputtered films showed a broad hexagonal to tetragonal phase transformation near 800°C, and a final grain size that was less than the fihn thickness with much voiding. A low Avrami exponent of 0.2 to 0.4 was obtained for the transformation of the sputtered films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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References

1. Saraswat, K.C., Brors, D.L., Fair, J.A., Monning, K.A., and Beyers, R., IEEE Trans. On Electron Devices ED–30, p. 1497(1983).Google Scholar
2. Shioya, Y. and Maeda, M., J. Appl. Phys. 60, p. 327(1986).Google Scholar
3. Telford, S.G., Eizenberg, M., Chang, M., Sinha, A.K., and Gow, T.R., J. Electrochem. Soc. 140 (12), p. 3689(1993).Google Scholar
4. Kim, Y.-W., Lee, N.-I., and Park, M.-H, Mat. Res. Soc. Proc. 355, p. 491(1995).Google Scholar
5. Cabral, C. Jr., Clevenger, L.A., Roy, R.A., Stephenson, G.B., Lavoie, C., Saenger, K.L., Jordon-Sweet, J., Viswanathan, R., Morales, G., and Ludwig, K.F. Jr., Conf. Proc. ULSI XI, p. 439(1996).Google Scholar
6. Colgan, E.G., Cabral, C. Jr., Clevenger, L. A., and Harper, J.M.E., Mat. Res. Soc. Proc. 387, p. 49(1995).Google Scholar
7. Cerva, H., Siemens AG, ZFE BT MR3, 81730 Munich, Private CommunicationGoogle Scholar
8. Nicolet, M.-A. and Lau, S.S., in VLSI Microelectronics Science, edited by Einsbruch, N.G. and Larrabee, G.B. (Academic Press, N.Y., 1983), p. 329–414.Google Scholar
9. Stanis, C., Thomas, O., Cotte, J., Charai, A., LeGoues, F.K., and d'Heurle, F.M., J. Vac. Sci. Technol. A 10(4), p. 907(1992).Google Scholar
10. Cunningham, B., Joseph, T.W., Gignac, L., and Domenicucci, A., Inst. Phys. Conf. Ser. 146, p. 565(1995).Google Scholar
11. Christian, J.W., The Theory of Transformations in Metals and Alloys, Pergamon Press Ltd., London, 1965, pp 14–560.Google Scholar