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Optical Activity of Yb3+ in MeV Ion-Implanted InP.

Published online by Cambridge University Press:  21 February 2011

S. Uekusa ,
A. Majima ,
H. Katsumata ,
Y. Noyori  and
M. Kumagai
S. Uekusa
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
A. Majima
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
H. Katsumata
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
Y. Noyori
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
M. Kumagai
Affiliation:
Kanagawa High-Technology Foundation, Kawasaki, Kanagawa, 214, Japan
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Abstract

For the evaluation of an implanted layer, photoluminescence (PL) and photoluminescence excitation (PLE) measurements, which are nondestructive and sensitive methods for identifying impurities and defects, were performed. Yb3+ -related sharp luminescence was observed at a wavelength of 1002nm, due to the transitions which occurred between the spin-orbit levels 2F5/2→2F7/2 of Yb3+ (4f13). Most efficient luminescence of Yb3+ was achieved at an excitation wavelength of around 880nm. The luminescence intensity of this peak (Yb3+) decreased with an increase in annealing temperature. Since the peak has not been observed for good samples in crystallinity, it may indicate that new, efficient energy transfer processes to rare-earth ions occur through the defect energy level. Especially, for the sample annealed at 600°C, Yb-related luminescence intensity excited by the photon energy below the band gap is about 3 times larger than that of excited by the photon energy above the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 201
Copyright
Copyright © Materials Research Society 1993

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References

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