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Next Generation of Thin Film Transistors Based on Zinc Oxide

Published online by Cambridge University Press:  17 March 2011

E. Fortunato ,
P. Barquinha ,
A. Pimentel ,
A. Gonçalves ,
L. Pereira ,
A. Marques  and
R. Martins
E. Fortunato
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
P. Barquinha
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
A. Pimentel
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
A. Gonçalves
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
L. Pereira
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
A. Marques
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
R. Martins
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
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Abstract

We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E1.9
Copyright
Copyright © Materials Research Society 2004

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References

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