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New Silicon-Carbon Materials Incorporating Si4C Building Blocks

Published online by Cambridge University Press:  10 February 2011

D. Chandrasekhar ,
J. Kouvetakis ,
J. Mc Murran ,
M. Todd  and
David J. Smith
D. Chandrasekhar
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
J. Kouvetakis
Affiliation:
Department of Chemistry, Arizona State University, Tempe, AZ 85287–1504
J. Mc Murran
Affiliation:
Department of Chemistry, Arizona State University, Tempe, AZ 85287–1504
M. Todd
Affiliation:
Department of Chemistry, Arizona State University, Tempe, AZ 85287–1504
David J. Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
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Abstract

Novel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCyth in films on (001) Si substrates. Films with carbon compositions ranging up to 20 at. % were deposited at substrate temperatures of 600–750°C using interactions of C(SiH3)4 or C(SiH2Cl)4 (C-H free precursors incorporating Si4C tetrahedra) and SiH4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 723
Copyright
Copyright © Materials Research Society 1997

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