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New Chemical Routes to Metal Nitrides

Published online by Cambridge University Press:  28 February 2011

Wayne L. Gladfelter ,
Jen-Wei Hwang ,
John F. Evans ,
Scott A. Hanson ,
Klavs F. Jensen  and
Kwok-Lun Ho
Wayne L. Gladfelter
Affiliation:
Department of Chemistry,University of Minnesota,Minneapolis,Minnesota
Jen-Wei Hwang
Affiliation:
Department of Chemistry,University of Minnesota,Minneapolis,Minnesota
John F. Evans
Affiliation:
Department of Chemistry,University of Minnesota,Minneapolis,Minnesota
Scott A. Hanson
Affiliation:
Department of Chemistry,University of Minnesota,Minneapolis,Minnesota
Klavs F. Jensen
Affiliation:
55455 and Department of Chemical Engineering,Massachusetts Institute of Technology 66–250,Cambridge,MA 02139
Kwok-Lun Ho
Affiliation:
55455 and Department of Chemical Engineering,Massachusetts Institute of Technology 66–250,Cambridge,MA 02139
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Abstract

After a brief introduction on how the differing properties of H2O and NH3 may effect the strategies used to synthesize metal nitrides, an overview of our use of azides to produce aluminum nitride thin films will be presented. The effect of changing the nitrogen source to one which contains at least one N - C bond is to increase dramatically the carbon content of the films. Replacing the alkyl groups attached to the aluminum with hydride ligands removes the final carbon source and forms what appears to be a promising new class of precursors. This is demonstrated by the study of the reaction of Me3NGaH3 with NH3 to produce the novel trimer, [H2GaNH2]3 . This fully characterized molecule converts at 150°C into gallium nitride. Surprisingly, it yields GaN having the sphalerite structure instead of the known wurtzite phase. A discussion of the reasons for this unusual route to a new crystalline phase of GaN is included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 180: Symposium A – Better Ceramics Through Chemistry IV , 1990 , 1017
Copyright
Copyright © Materials Research Society 1990

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References

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