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Nanoalloyed Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 Multilayers

Published online by Cambridge University Press:  11 August 2011

M. Winkler ,
Jan D. Koenig ,
S. Buller ,
U. Schuermann ,
L. Kienle ,
W. Bensch  and
H. Boettner
M. Winkler
Affiliation:
Fraunhofer-Institute for Physical Measurement Techniques IPM, Thermoelectric Systems, Heidenhofstraße 8, 79110 Freiburg, Germany
Jan D. Koenig
Affiliation:
Fraunhofer-Institute for Physical Measurement Techniques IPM, Thermoelectric Systems, Heidenhofstraße 8, 79110 Freiburg, Germany
S. Buller
Affiliation:
Institute of Inorganic Chemistry, Christian-Albrechts-Universität zu Kiel, Max-Eyth-Str. 2, 24118 Kiel, Germany
U. Schuermann
Affiliation:
Synthesis and Real Structure, Institute for Materials Science, Christian-Albrechts-Universität zu Kiel, Kaiserstr. 2, 24143 Kiel, Germany
L. Kienle
Affiliation:
Synthesis and Real Structure, Institute for Materials Science, Christian-Albrechts-Universität zu Kiel, Kaiserstr. 2, 24143 Kiel, Germany
W. Bensch
Affiliation:
Institute of Inorganic Chemistry, Christian-Albrechts-Universität zu Kiel, Max-Eyth-Str. 2, 24118 Kiel, Germany
H. Boettner
Affiliation:
Fraunhofer-Institute for Physical Measurement Techniques IPM, Thermoelectric Systems, Heidenhofstraße 8, 79110 Freiburg, Germany
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Abstract

In this work, thin films of Bi2Te3 and Sb2Te3 were synthesized by the nanoalloying approach: Nanoscale layers of the elements Element nanoscale layers of Bi, Sb and Te are stoichiometrically deposited on a cold substrate using a MBE setup and subjected to an annealing process in which a solid state reaction yielding Bi2Te3 and Sb2Te3 takes place. Besides the two binary compounds, nanoscale multilayer (ML) stacks of 9 nm Bi2Te3/9 nm Sb2Te3 were created. The electrical transport properties of the binary compounds were determined in dependence of composition. Compound formation was directly observed in temperature-dependent in-situ XRD scans and was found to start at ∼100 °C. The stability of the Bi2Te3/Sb2Te3 ML nanostructure against temperature-driven interdiffusion during annealing was examined by SIMS and TEM for an annealing temperature of 150 and 250 °C, respectively. A comparative TEM study of the as grown and annealed state is presented.

Keywords

thermoelectricthin filmnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1329: Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices , 2011 , mrss11-1329-i10-15
Copyright
Copyright © Materials Research Society 2011

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References

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