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MoirÉ Pattern Studies of Thin Layers Deposited on (001)Si Substrates: Cases of Tisi2 and GaAs.

Published online by Cambridge University Press:  25 February 2011

A. Rocher ,
X. Wallart  and
M.N. Charasse
A. Rocher
Affiliation:
Laboratoire d'Optique Electronique du CNRS -29 rue Jeanne Marvig, F-31400 TOULOUSE -, FRANCE
X. Wallart
Affiliation:
Institut Supérieure d'Electronique du Nord, 41 Bd Vauban, F-59046 LILLE -, FRANCE
M.N. Charasse
Affiliation:
THOMSON-CSF/LCR - Domaine de Corbeville, F-91404 ORSAY -, FRANCE
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Abstract

Moiré pattern images have been used to investigate the crystalline quality of thin films deposited on (100)Si substrates. Observations performed on TiSi2 show a three-dimensional growth process and two different epitaxial modes. In the case of GaAs epilayers, it is shown that the residual strains are not uniformly distributed in the layer. Residual strain and threading dislocations are related to imperfections of the misfit dislocation network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 95
Copyright
Copyright © Materials Research Society 1989

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