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Metastable Defects in Light Soaked Amorphous Silicon at 77 K

Published online by Cambridge University Press:  01 February 2011

Tong Ju ,
Paul Stradins  and
P. Craig Taylor
Tong Ju
Affiliation:
jutong@gmail.com, University of Utah, Physics, 1901 Halford Ave,Apt 9, Santa Clara, CA, 95051, United States
Paul Stradins
Affiliation:
Pauls_Stradins@nrel.gov, National Renewable Energy Lab, Golden, CO, 80401, United States
P. Craig Taylor
Affiliation:
pctaylor@mines.edu, Colorado School of Mines, Physics, Golden, CO, 80401, United States
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Abstract

We have observed the growth of defects caused by optical illumination in liquid nitrogen. We kept the sample in liquid nitrogen over one year. After one year and half the ESR signal reached ∼1018 cm−3 with no evidence of saturation. After that, we step-wise annealed isochronal the sample up to room temperature, where two thirds of original defects were annealed out. After room temperature, the sample was annealing isothermally around 300 K for several months. At this temperature, the defects slowly anneal. After a hundred of hours at 295K, the defect density decreased 10x from its original value at 77K.

Keywords

defectselectron spin resonanceSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A02-04
Copyright
Copyright © Materials Research Society 2008

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References

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