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Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

Published online by Cambridge University Press:  21 February 2011

Zheng Xu ,
Toshihiko Kosugi ,
Kenji Gamo  and
Susumu Namba
Zheng Xu
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Toshihiko Kosugi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Kenji Gamo
Affiliation:
Research Center for Extreme Materials and Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Susumu Namba
Affiliation:
Research Center for Extreme Materials and Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

W films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 223
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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