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Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible with CMOS Technology

Published online by Cambridge University Press:  01 February 2011

Carl B. Poitras ,
Michal Lipson ,
Huaqiang Wu  and
Michael G. Spencer
Carl B. Poitras
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
Michal Lipson
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
Michael G. Spencer
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Continuous-wave and time resolved photoluminescence measurements on europium doped gallium nitride in the form of a powder are presented. The powder is obtained from reacting NH3 and a melt of gallium and europium with bismuth as a wetting agent. Photoluminescence from continuous wave excitation above the GaN bandgap reveals that an optimal concentration of about 1 at.% of Eu gives the most intense emission at 621 nm. Above gap time resolved photoluminescence reveals that energy transfer between the host material (GaN) and the rare earth ions occurs at a faster rate than previously reported for MBE grown GaN:Eu. Applications of the powder are directed towards CMOS compatible light emitters that are spun on silicon. A high temperature anneal of the powder shows no change in the CW photoluminescence spectrum of the powder, confirming CMOS compatibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.2
Copyright
Copyright © Materials Research Society 2005

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