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Low-Temperature Thermal Conductivity of Rubrene Single Crystals: Quantitative Estimation of Defect Density in Bulk and Film Crystals

Published online by Cambridge University Press:  31 January 2011

Yugo Okada ,
M. Uno  and
Jun Takeya
Yugo Okada
Affiliation:
yugo@chem.sci.osaka-u.ac.jp, Osaka University, Toyonaka, Japan
M. Uno
Affiliation:
uno@tri.pref.osaka.jp, TRI-Osaka, Izumi, Japan
Jun Takeya
Affiliation:
takeya@chem.sci.osaka-u.ac.jp, Osaka University, Dept. of Chemistry, Grad. School of Science, 1-1 Machikaneyama, Toyonaka, 560-0043, Japan, +81-6-6850-5398, +81-6-6850-6797
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Abstract

Thermal conductivity of rubrene single crystals is measured for both bulk and film-like crystals down to 0.5 K in order to estimate quantitatively density of crystalline defects through their phonon mean free paths. The temperature profile of the bulk rubrene crystals exhibit pronounced peak at ∼ 10 K in the thermal conductivity as the result of very long mean-free paths of their phonons which indicates extremely low-level defect density in the region of 1015-1016 cm−3 depending on different growth methods. The crystals grown from gas phase tend to have less defects than those grown from solution. It turned out that the film-like crystals have a few times more defect density as the result of the measurement by using newly developed devices for minute crystals.

Keywords

electronic materialorganicsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B10-59
Copyright
Copyright © Materials Research Society 2009

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References

1 Kloc, C. Simpkins, P. G. Siegrist, T. and Laudise, R. A. J. Cryst. Growth 182, 416 (1997).Google Scholar
2 Podzorov, V. Pudalov, V. M. and Gershenson, M. E. Appl. Phys. Lett. 82, 1739 (2003).Google Scholar
3 Takeya, J. Nishikawa, T. Takenobu, T. Kobayashi, S. Iwasa, Y. Mitani, T. Goldmann, C. Krellner, C., and Batlogg, B. Appl. Phys. Lett. 85, 5078 (2004).Google Scholar
4 Matsukawa, T. Takahashi, Y. Tokiyama, T. Sasai, K. Murai, Y. Hirotai, N. Tominari, Y. Mino, N., Yoshimura, M. Abe, M. Takeya, J. Kitaoka, Y. Mori, Y. Morita, S. and Sasaki, T. Jap. J. Appl. Phys. 47, 8950 (2008).Google Scholar
5 Takeya, J. Yamagishi, M. Tominari, Y. Hirahara, R. Nakazawa, Y. Nishikawa, T. Kawase, T. Shimoda, T. and Ogawa, S. Appl. Phys. Lett. 90, 102120 (2007).Google Scholar
6 Berman, R. Thermal Conduction in Solids (Oxford University Press, Oxford, 1976).Google Scholar