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Low Temperature Tantalum Pentoxide Thin Films

Published online by Cambridge University Press:  22 February 2011

Kee-Won Kwon ,
Chang-Seok Kang ,
Tai-su Park ,
Yong-Bin Sun ,
Neal Sandler  and
Dana Tribula
Kee-Won Kwon
Affiliation:
SAMSUNG Electronics Co., P.O. Box 107, Suwon, Kyungki-Do, 449900, Korea
Chang-Seok Kang
Affiliation:
SAMSUNG Electronics Co., P.O. Box 107, Suwon, Kyungki-Do, 449900, Korea
Tai-su Park
Affiliation:
SAMSUNG Electronics Co., P.O. Box 107, Suwon, Kyungki-Do, 449900, Korea
Yong-Bin Sun
Affiliation:
SAMSUNG Electronics Co., P.O. Box 107, Suwon, Kyungki-Do, 449900, Korea
Neal Sandler
Affiliation:
Lam Research Co., 94026 Milmont Dr., Fremont, CA, 94538, USA
Dana Tribula
Affiliation:
Lam Research Co., 94026 Milmont Dr., Fremont, CA, 94538, USA
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Abstract

Ta2O5 films of high reliability and low leakage current density were obtained by low temperature deposition and subsequent high temperature oxygen anneal. At higher temperatures than 410°C, growth was governed by the formation of radicals in gas phase and oxidation on the surface, while at lower temperatures by the dissociation of reactant on the surface of substrates. As a result, the films deposited at lower temperatures had undensified structures, and contained more carbon that might be a leakage current source in Ta2O5 film. During post-deposition heat treatment in 800°C oxidating ambient, carbon was removed away and silicon was diffused from the substrate into the Ta2O5 film efficiently for its as-grown porous structure. After oxygen anneal, low temperature films get denser and are crystallized to mixed phase of orthorhombic and hexagonal Ta2O5, while high temperature films crystallized to orthorhombic single phase. Ta2O5 capacitor with low temperature films showed superior leakage characteristics applicable to sub-half micron memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 505
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES CITED

1. Temmler, D., Symp. on VLSI Tech. (1991) p. 13.Google Scholar
2. Tarui, Y., Oka, S., Matsui, M., Yamagishi, K. and Kuroiwa, K., Ext. Abstracts of Solid State Devices and Materials, Tokyo (1987) p.219.Google Scholar
3. Isobe, C. and Saitoh, M., Appl. Phys. Lett. 56 (10) (1990) p.907.Google Scholar
4. Shinriki, H., Nakata, M., IEEE Tran. Elect. Devices vol. ED-38 no. 3 (1991) p. 465.Google Scholar
5. Kamiyama, S., Saeki, T., Mori, H. and Numasawa, Y., IEDM Tech. Dig. (1991) p. 827 Google Scholar
6. Levenspiel, O., Chemical Reaction Engineering. 2nd ed. (John Wiley and Sons Press, New York, 1972) p.32.Google Scholar
7. Saitoh, M., Mori, T. and Tamura, H., IEDM Tech. Dig. (1986) p.680.Google Scholar
8. Roth, et al., J. Solid State Chem. 2 (1970) p. 445 Google Scholar
9. Matsui, M., Oka, S., Yamagishi, K., Kuroiwa, K. and Tarui, Y., Jap. J. Appl. Phys., 27 (4) (1988) p. 506.Google Scholar
10. Shinriki, H., Nakata, M., Nishioka, Y. and Mukai, K., IEEE Elect. Dev. Lett. 10 (11) (1989) p. 514.Google Scholar