Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-21T16:36:02.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Electrically Resistive Transparent Indium-Tin-Oxide Epitaxial Film on (001) Surface of YSZ by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

Hiromichi Ohta ,
Masahiro Orita ,
Masahiro Hirano ,
Hideo Hosono ,
Hiroshi Kawazoe  and
Hiroaki Tanji
Hiromichi Ohta
Affiliation:
Hosono Project of Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN, h-ohta@ ksp.or.jp
Masahiro Orita
Affiliation:
Hosono Project of Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN
Masahiro Hirano
Affiliation:
Hosono Project of Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN
Hideo Hosono
Affiliation:
Hosono Project of Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, JAPAN
Hiroshi Kawazoe
Affiliation:
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, JAPAN
Hiroaki Tanji
Affiliation:
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, JAPAN
Get access

Abstract

High quality ITO thin films were grown hetero-epitaxially on extremely flat substrate of (001) YSZ by a pulsed laser deposition technique at a substrate temperature of 600°C. The crystal orientation relationship between the film and YSZ were confirmed as ITO (001) // YSZ (001) and ITO (010) // YSZ (010), respectively, by HR-XRD and HR-TEM. The carrier densities of the films were almost equal to Sn02 concentration in the films. That is, almost all the doped Sn4+ ions were activated to release electrons to the conduction band. The carrier densities of the films were enhanced up to 1.9×1021cm−3, while the Hall mobility showed a slight, almost linear, decrease from 55 to 40cm2V−1s−1 with increasing SnO2 concentration. The low resistivity is due to larger electron mobility, which most likely resulted from good crystal quality of the films. The optical transmissivity of the film exceeded 85% at wavelengths from 340 to 780nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 253
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kamei, M., Yagami, T., Shigesato, Y, Appl. Phys. Lett., 64, 2712 (1994).Google Scholar
2 Taga, N., Odaka, H., Shigesato, Y., Yasui, I., Kamei, M., Haynes, T. E., J. Appl. Phys., 80, 978 (1996).Google Scholar
3 Tarsa, E. J., English, J. H., Speck, J. S., App/. Phys. Lett., 62, 2332 (1993).Google Scholar
4 Jia, Q. X., Zheng, J. P., Kwok, H. S., Anderson, W. A., Thin Solid Films, 258, 260 (1995).Google Scholar
5 Coutal, C., Azema, A., Roustan, J. C., Thin Solid Films, 288, 248 (1996).Google Scholar
6 Adurodija, F. O., Izumi, H., Ishihara, T., Yoshioka, H., Yamada, K., Matsui, H., Motoyama, M., Thin Solid Films, 350, 79 (1999).Google Scholar
7 Kim, H., Pique, A., Horwitz, J. S., Mattoussi, H., Murata, H., Kafafi, Z. H., Chrisey, D. B., Appl. Phys. Lett., 74, 3444 (1999).Google Scholar