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Lithographic Materials Technologies: 193 nm Imaging and Beyond

Published online by Cambridge University Press:  10 February 2011

Elsa Reichmanis ,
Omkaram Nalamasu ,
Francis M. Houlihan ,
Allen H. Gabor ,
Mark O. Neisser  and
Murrae J. Bowden
Elsa Reichmanis
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, New Jersey 07974
Omkaram Nalamasu
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, New Jersey 07974
Francis M. Houlihan
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, New Jersey 07974
Allen H. Gabor
Affiliation:
Arch Chemicals, 200 Massasoit Ave., East Providence, Rhode Island 02914
Mark O. Neisser
Affiliation:
Arch Chemicals, 200 Massasoit Ave., East Providence, Rhode Island 02914
Murrae J. Bowden
Affiliation:
Arch Chemicals, 200 Massasoit Ave., East Providence, Rhode Island 02914
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Abstract

Advances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning ≤ 0.1 μm design rule devices in future fabs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 23
Copyright
Copyright © Materials Research Society 2000

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