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Laser Processing of Silicon for Advanced Microelectronic Devices and Circuits*

Published online by Cambridge University Press:  15 February 2011

L.D. Hess ,
S.A. Kokorowski ,
G.L. Olson  and
G. Yaron
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G. Yaron
Affiliation:
Currently with National Semiconductor, Santa Clara, California.
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Abstract

Some of the basic requirements currently envisioned for advanced microelectronic devices and circuits are outlined and discussed in terms of fabrication techniques. Phenomenological aspects of laser processing of semiconductor materials are presented and related to the potential application of this technology for overcoming some of the fundamental limitations of conventional fabrication methods. Laser processing results obtained from a variety of siliconbased materials and test structures are presented and used to illustrate the unique features of the laser technique and the novel approach it brings to semiconductor device and circuit fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 307
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Supported in part by U.S. Army ERADCOM, Contract No. DAAK 20-80-C-0269.

References

REFERENCES

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